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Effects of Glow-Discharge Parameters on Silicon Coating Thickness Deposited on 316 Stainless Steel Samples

机译:辉光放电参数对316不锈钢样品上沉积的硅涂层厚度的影响

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Silicon as a light element can be used as the tokamak first wall coating in order to protect the plasma from impurities which come from the wall. In this paper, we deposit an amorphous-silicon layer by the use of the glow discharge technique on the wall surface of the test chamber made from SS316. To do so, we employ silane as a source of silicon ions. The siliconization process is conducted at two time durations of 90 and 150 min. SEM image of the coated surface shows that the structure of the coated layer deposited by the 150-min is more compact in comparison with that of 90-min. Effect of current density on coating properties is evaluated by placing four samples at different locations on the wall surface which shows that the optimal values of current density are in the range of 14-20 mu A/cm(2) and the higher range of current density can damage the coating. The results confirm that by increasing the time of siliconization the coating thickness is increased successfully from 100 to 250 nm without appearance of any damage in coating.
机译:硅作为轻质元素可以用作托卡马克的第一壁涂层,以保护等离子体免受来自壁的杂质的影响。在本文中,我们使用辉光放电技术在由SS316制成的测试室的壁表面上沉积了非晶硅层。为此,我们使用硅烷作为硅离子源。硅化过程在90和150分钟的两个时间段内进行。涂覆表面的SEM图像显示,与90分钟相比,通过150分钟沉积的涂层的结构更致密。通过在壁表面的不同位置放置四个样品来评估电流密度对涂层性能的影响,这表明电流密度的最佳值在14-20μA / cm(2)的范围内,并且电流范围较高密度会损坏涂层。结果证实,通过增加硅化时间,涂层厚度成功地从100 nm增加到250 nm,而涂层没有出现任何损坏。

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