Effect of TMS (nanostructured silicon dioxide) on growth of Changbai larch seedlings

摘要

The roots of 200 one-year-old Changbai Larch (Lam olgensis ) seedlings were soaked for 6 hours at the TMS concentrations of 2000, 1000, 500, 250,125, and 62 μL- L~(-1). Mean seedling height, root collar diameter, main root length and number of lateral roots were measured every 15 days during growing season from May 30 to Oct. 20. Experimental results showed that TMS treatments greatly promoted seedling growth and improved seedling quality. The treatment by 500 μL- L~(-1) TMS produced the best result, for which the mean height, root collar diameter, main root length, and the number of lateral roots of seedlings were increased by 42.5 %, 30.7%, 14.0%, and 31.6%, respectively, compared to that of the control seedlings. As to seedling quality, grade-lseedling and grade-ll seedlings were fifty-fifty, and no grade-Ill seedlings was found. The treatment by 500 μL- L~(-1) TMS resulted in the highest chlorophyll concentration