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首页> 外文期刊>Journal of food quality >Reaction Synthesis of Aluminum Nitride-Boron Nitride Composites Based on the Nitridation of Aluminum Boride
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Reaction Synthesis of Aluminum Nitride-Boron Nitride Composites Based on the Nitridation of Aluminum Boride

机译:基于硼化铝的氮化反应合成氮化铝-氮化硼复合材料

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Aluminum nitride-boron nitride (AlN-BN) composites were prepared based on the nitridation of aluminum boride (AlB_2). AlN powder was added to change the BN volume fraction in the obtained composites. Thermogravimetry-differential thermal analysis (TG-DTA), X-ray diffractometry, and the nitridation ratio were used to investigate the nitridation process of AlB_2. At ~1000℃, a sharp exothermic peak occurred in the DTA curve, corresponding to the rapid nitridation of aluminum in AlB_2. On the other hand, the nitridation of the transient phase, Al_(1.67)B_(22), was very slow when the temperature was <1400℃. However, the nitridation speed obviously accelerated at temperatures >1600℃. The pressure of the nitrogen atmosphere was also an important factor; high nitrogen pressure remarkably promoted nitridation. Treatment at 2000℃ was disadvantageous for nitridation, because of the rapid formation of a dense surface layer that inhibited nitrogen diffusion into the specimen interior. Three specimens, with 5 wt% Y_2O_3 additive and different BN contents, were prepared by pressureless reactive sintering, according to the determined sintering schedule. Electron microscopy (scanning and transmission) observations revealed that the in-situ-formed BN flakes were homogeneously and isotropically distributed in the AlN matrix. A schematic mechanism for microstructural formation was developed, based on the results of nitridation and the microstructural features of the obtained composites. The obtained composites, with a low BN content, exhibited a high bending strength, comparable to that of reported hot-pressed AlN-BN composites.
机译:基于硼化铝(AlB_2)的氮化制备了氮化铝-氮化硼(AlN-BN)复合材料。添加AlN粉末以改变获得的复合物中的BN体积分数。用热重-差热分析(​​TG-DTA),X射线衍射和氮化率研究了AlB_2的氮化过程。在〜1000℃时,DTA曲线出现了一个急剧的放热峰,这与AlB_2中铝的快速氮化有关。另一方面,当温度<1400℃时,过渡相Al_(1.67)B_(22)的氮化非常缓慢。然而,在> 1600℃的温度下,氮化速度明显加快。氮气气氛的压力也是一个重要因素。高的氮气压力显着促进了氮化作用。在2000℃下进行处理对于氮化是不利的,因为它会迅速形成致密的表层,从而抑制氮扩散到样品内部。根据确定的烧结时间表,通过无压反应性烧结制备了三个样品,其中Y_2O_3的添加量为5 wt%,BN含量​​不同。电子显微镜(扫描和透射)观察表明,原位形成的BN薄片均匀且各向同性地分布在AlN基质中。基于氮化的结果和所得复合材料的微观结构特征,开发了一种微观结构形成的示意性机理。所获得的BN含量低的复合材料表现出高的弯曲强度,与报道的热压AlN-BN复合材料相当。

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