Patent Issued for Semiconductor Device with a Plurality of Mark through Substrate Vias

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Patent Issued for Semiconductor Device with a Plurality of Mark through Substrate Vias

机译：通过衬底过孔为具有多个标记的半导体器件颁发了专利

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2013 MAR 20 (VerticalNews) -- By a News Reporter-Staff News Editor at Journal of Engineering --nAdvanced Semiconductor Engineering, Inc (Kaohsiung, TW) has been issued patent number 8390129,naccording to news reporting originating out of Alexandria, Virginia, by VerticalNews editors.

机译：2013年3月20日（垂直新闻）-由《工程杂志》的新闻记者兼工作人员担任新闻编辑-根据位于弗吉尼亚州亚历山大市的新闻报道，nAdvanced Semiconductor Engineering，Inc（TW.Kaohsiung）已获专利号8390129。由VerticalNews编辑。

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《Journal of Engineering》 |2013年第12期|1-3|共3页
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Electronics; Advanced Semiconductor Engineering Inc.;

机译：电子产品;先进半导体工程公司;

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Patent Issued for Semiconductor Device with a Plurality of Mark through Substrate Vias

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