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Effect of slurry parameters on material removal rate in multi-wire sawing of silicon wafers: a tribological approach

机译:硅晶片多线锯中浆料参数对材料去除率的影响:摩擦学方法

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The main goals for the silicon wafering industry are to improve the surface quality of wafers by reducing the total thickness variation and subsurface defects and to increase the production by reducing the wafer thickness. To attain these goals, it is important to understand the material removal mechanisms involved in the process, which at the moment are little understood and explored. In this study, the effect of slurry parameters on the wear rate and surface roughness of solar grade silicon have been investigated using a tribological approach. A reciprocating pin-on-plate tribometer has been used to simulate the abrasion process occurring in a slurry-based multi-wire silicon saw. The tribological system consisted of silicon, SiC slurry, and stainless steel counterpart. The results showed that a narrow size distribution of the SiC particles in the slurry increases the wear rate and improves the surface quality. The shape factors of the SiC particles in the slurry were also investigated and revealed that particles with lower degree circularity and higher aspect ratio led to lower roughness.
机译:硅晶片工业的主要目标是通过减少总厚度变化和表面缺陷来改善晶片的表面质量,并通过减小晶片厚度来提高产量。为了实现这些目标,重要的是要了解过程中涉及的材料去除机制,目前尚不了解和探索这些机制。在这项研究中,已使用摩擦学方法研究了浆料参数对太阳能级硅的磨损率和表面粗糙度的影响。往复式销盘摩擦仪已用于模拟在基于浆料的多线硅锯中发生的磨损过程。摩擦系统由硅,SiC浆料和不锈钢对应物组成。结果表明,浆料中SiC颗粒的窄粒度分布增加了磨损率并改善了表面质量。还研究了浆料中SiC颗粒的形状因子,结果表明,圆度较低和长径比较高的颗粒会导致粗糙度降低。

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    《Journal of Engineering Tribology》 |2011年第10期|p.1023-1035|共13页
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