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Reduced graphene oxide/molybdenum oxide thin films and its' capacitance properties: Different substrates effect

机译:降低石墨烯氧化物/钼氧化物薄膜及其“电容性质:不同的基板效应

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This study used the Chemical Bath Deposition method, which is quite simple and cheap, to produce GO/MoO3 nanocomposite, whose high capacitance properties draws attention. The Graphene oxide solution is prepared by synthesizing through the Hummer Method. These two materials were left to grow slowly on their own so that GO/MoO3 nanocomposite structures form thin films on Glass, Poly(methyl methacrylate), Fluorine tin oxide, and indium tin oxide substrates. The surface and structural properties of these GO/MoO3 nanocomposite structures were characterized by Scanning Electron Microscopy, Energy Dispersive X-ray, FTIR, X-ray diffraction, and Atomic Force Microscopy. The nanocomposites' capacitance properties produced on different substrates were measured in -0.2 - 0.2 V at different scan rates. As a result, the highest specific capacitance values were achieved at 25 mV/s scan rate, as 587 F/g, for Poly(methyl methacrylate).
机译:本研究采用了化学浴沉积法,这是非常简单且便宜的,生产Go / Moo3纳米复合材料,其高电容性质引起了注意力。 通过通过蜂扣方法合成制备石墨烯氧化物溶液。 将这两种材料留在自身上缓慢生长,使得GO / MOO3纳米复合材料结构在玻璃上形成薄膜,聚(甲基丙烯酸甲酯),氟锡和氧化铟锡基材上。 通过扫描电子显微镜,能量分散X射线,FTIR,X射线衍射和原子力显微镜,表征了这些GO / MOO3纳米复合材料结构的表面和结构性能。 以不同的扫描速率在-0.2-0.2V下测量在不同底物上产生的纳米复合材料的电容性质。 结果,以25mV / s的扫描速率,为poly(甲基丙烯酸甲酯),最高特异性电容值为587 f / g。

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