Balancing Thermal and Electrical Packaging Requirements for GaN Microwave and Millimeter-Wave High Power Amplifier Modules

摘要

A method for balancing thermal and electrical packaging requirements for gallium nitride (GaN) high power amplifier (HPA) modules is presented. The goal is to find a design approach that minimizes the junction temperature of the GaN so that it is reliable and has interconnects that meet electrical performance requirements. One benefit of GaN is that it can simultaneously achieve high power density and operate at microwave and millimeter-wave frequencies. However, the power density can be so high that the necessary thermal solutions can have negative impact on electrical performance. This is especially a concern for the electrical interconnects required for the input/ output ports on high power amplifier devices. This is because the signal interconnects must operate at GHz frequencies, which means that special care must be taken to avoid problems such as undesired signal coupling and ground path inductance. Therefore, this work focuses on GaN packaging and its integration into a module. The results show that an optimum thickness for the GaN heat spreader exits for thermal performance but the electrical design is impacted negatively if the optimum thermal design is chosen. Therefore, a balanced design is chosen which meets overall system level requirements.