首页> 外文期刊>Journal of Electronic Packaging >Experimental Study of Damage Mechanism of Carbon Nanotube as Nanocomponent of Electronic Devices Under High Current Density
【24h】

Experimental Study of Damage Mechanism of Carbon Nanotube as Nanocomponent of Electronic Devices Under High Current Density

机译:高电流密度下碳纳米管作为电子器件纳米成分的损伤机理实验研究

获取原文
获取原文并翻译 | 示例
           

摘要

The damage mechanisms of carbon nanotubes are considered to be the oxidation by Joule heating and migration of carbon atoms by high-density electron flows. In this study, a high current density testing system was designed and applied to multiwalled carbon nanotubes (MWCNTs) collected at the gap between thin-film electrodes. Local evaporation of carbon atoms occurred on the cathode side of the MWCNTs under relatively low current density conditions, and the center area of the MWCNTs under high current density conditions. The damaged morphology could be explained by considering both Joule heating and electromigration behavior of MWCNTs.
机译:碳纳米管的破坏机理被认为是焦耳加热引起的氧化和碳原子通过高密度电子流的迁移。在这项研究中,设计了一种高电流密度测试系统,并将其应用于在薄膜电极之间的间隙处收集的多壁碳纳米管(MWCNT)。在相对低的电流密度条件下,碳原子的局部蒸发发生在MWCNT的阴极侧,而在高电流密度的条件下,碳纳米管的中心区域发生了蒸发。可以通过同时考虑焦耳加热和多壁碳纳米管的电迁移行为来解释受损的形态。

著录项

  • 来源
    《Journal of Electronic Packaging》 |2014年第4期|041011.1-041011.5|共5页
  • 作者单位

    Department of Intelligent Machines and System Engineering, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan;

    Department of Intelligent Machines and System Engineering, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan;

    Department of Intelligent Machines and System Engineering, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan;

    Department of Intelligent Machines and System Engineering, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号