机译:由于芯片包相互作用,高级硅节点中的载波移动性移位
Mentor Graphics Corporation 46871 Bayside Parkway Fremont CA 94538;
Mentor Graphics Corporation 46871 Bayside Parkway Fremont CA 94538;
Mentor Graphics Corporation 16 Halabyan Street Yerevan 0038 Armenia;
Mentor Graphics Corporation 16 Halabyan Street Yerevan 0038 Armenia;
Qualcomm Technologies Inc. 5775 Morehouse Drive San Diego CA 92121;
Qualcomm Technologies Inc. 5775 Morehouse Drive San Diego CA 92121;
Consultant 850 Beech Street #610 San Diego CA 92101;
Department of Microelectronic Materials and Nanoanalysis Fraunhofer Institute for Ceramic Technologies and Systems IKTS Maria-Reiche-Strasse 2 Dresden D-01109 Germany;
Department of Microelectronic Materials and Nanoanalysis Fraunhofer Institute for Ceramic Technologies and Systems IKTS Maria-Reiche-Strasse 2 Dresden D-01109 Germany;
机译:使用高级载流子模型对绝缘体上的薄硅上构建的温度传感器进行建模
机译:缓冲气体添加剂(调节剂/移位试剂)在离子迁移率光谱中:应用,迁移率的预测,以及相互作用能量和结构的影响
机译:离子迁移谱中的移位试剂:相互作用位点的数量,大小和相互作用能对缬氨醇和乙醇胺迁移率的影响
机译:CPI应力导致高级硅节点中的载流子迁移
机译:通过表征和先进的数值模拟,改善玻璃上的薄膜硅太阳能电池中前表面电荷载流子的收集。
机译:通过子带隙时间分辨的太赫兹光谱分式硅的载流子迁移率
机译:利用先进的载流子迁移模型建立基于薄硅绝缘体的温度传感器建模