Atomic Layer Epitaxy of InAs Using Tertiarybutylarsine

摘要

Tertiarybutylarsine and trimethylindium were used as precursors for atomic layer epitaxy of InAs. Self-limiting growth has been observed for a large temperature range between 350—410℃. In-situ reflectance difference spectros-copy was used to study the difference between the As and In self-limiting mechanisms on the InAs surface and also to optimize the growth parameters. Optical and transport properties of InAs grown epilayers show that high purity material can be achieved by atomic layer epitaxy.