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Nature of Growth Pits in Lead Salt Epilayers Grown by Molecular Beam Epitaxy

机译:分子束外延生长的铅盐外延层中生长坑的性质

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We present a detailed study on the surface morphologies and chemical composition of growth pits in lead selenide (PbSe) epilayers grown by molecular-beam epitaxy. Various growth pits were investigated by scanning electron microscopy and energy-dispersive x-ray analysis. The vast majority of growth pits within the PbSe epilayers contained either single or multiple PbSe microcrystals with a distinct cuboid shape. Based on the observed structures and morphologies of the PbSe microcrystals, the formation mechanism of the cuboid structures was considered to be (100) preferential crystal growth originating from PbSe polycrystalline seeds.
机译:我们对分子束外延生长的硒化铅(PbSe)外延层中的生长坑的表面形态和化学成分进行了详细的研究。通过扫描电子显微镜和能量色散X射线分析研究了各种生长坑。 PbSe外延层内的绝大多数生长坑都包含单个或多个具有明显长方体形状的PbSe微晶。根据观察到的PbSe微晶的结构和形态,长方体结构的形成机理被认为是(100)源自PbSe多晶种的优先晶体生长。

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