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Molecular Dynamics Simulation of Mechanical Properties of Single-Crystal Bismuth Telluride Nanowire

机译:单晶碲化铋纳米线力学性能的分子动力学模拟

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The mechanical properties of single-crystal bismuth telluride nanowires have been studied by molecular dynamics methods. The mechanical behavior of the Bi2Te3 nanowire for two principal axes was simulated under different strain rates at low temperature and the results compared with those of bulk Bi2Te3. The simulation results show that, due to its marked anisotropy, the nanowire shows quite different failure behaviors in the two directions, with the failure stress for the a-axis (4.7 GPa) being three times that for the c-axis (1.4 GPa). The stress–strain curve of the nanowire is different from that for Bi2Te3 bulk, as surface stress induced by atomic rearrangement significantly reduces the strength of the nanowire. The effect of strain rate on the mechanical properties of the nanowire has also been analyzed, showing that the failure stress and failure strain decrease with decreasing strain rate, a behavior not apparent in the bulk Bi2Te3 simulation.
机译:通过分子动力学方法研究了单晶碲化铋纳米线的力学性能。在低温下不同应变速率下模拟了Bi 2 Te 3 纳米线在两个主轴上的力学行为,并将其与块状Bi 2的力学行为进行了比较。 Te 3 。仿真结果表明,由于其明显的各向异性,纳米线在两个方向上表现出截然不同的破坏行为,a轴(4.7 GPa)的破坏应力是c轴(1.4 GPa)的破坏应力的三倍。 。纳米线的应力-应变曲线与Bi 2 Te 3 体的应力-应变曲线不同,因为原子重排引起的表面应力显着降低了纳米线的强度。还分析了应变速率对纳米线力学性能的影响,结果表明,随着应变速率的降低,破坏应力和破坏应变减小,而在Bi 2 Te 3 模拟。

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