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首页> 外文期刊>Journal of Electronic Materials >Power Factor Anisotropy of p-Type and n-Type Conductive Thermoelectric Bi-Sb-Te Thin Films
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Power Factor Anisotropy of p-Type and n-Type Conductive Thermoelectric Bi-Sb-Te Thin Films

机译:p型和n型导电热电Bi-Sb-Te薄膜的功率因数各向异性

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The best films for thermoelectric applications near room temperature are based on the compounds Bi2Te3, Sb2Te3, and Bi2Se3, which as single crystals have distinct anisotropy in their electrical conductivity σ regarding the trigonal c-axis, whereas the Seebeck coefficient S is nearly isotropic. For p- and n-type alloys, P ⊥c > P ||c, and the power factors P ⊥c of single crystals are always higher compared with polycrystalline films, where the power factor is defined as P = S 2 σ, ⊥c and ||c are the direction perpendicular and parallel to the c-axis, respectively. For the first time in sputter-deposited p-type (Bi0.15Sb0.85)2Te3 and n-type Bi2(Te0.9Se0.1)3 thin films, the anisotropy of the electrical conductivity has been measured directly as it depends on the angle φ between the electrical current and the preferential orientation of the polycrystals (texture) using a standard four-probe method. The graphs of σ(φ) show the expected behavior, which can be described by a weighted mixture of σ ⊥c and σ ||c contributions. Because (σ ⊥c||c) p < (σ ⊥c||c) n , the n-type films have stronger anisotropy than the p-type films. For this reason, the angular weighted contributions of P ||c lead to a larger drop in the power factor of polycrystalline n-type films compared with p-type films.
机译:室温附近热电应用的最佳薄膜是基于化合物Bi 2 Te 3 ,Sb 2 Te 3 和Bi 2 Se 3 ,它们作为单晶在三角c轴上的电导率σ具有明显的各向异性,而塞贝克系数S几乎是各向同性的。对于p型和n型合金,P ⊥c || c ,单晶的功率因数P ⊥c为与功率因数定义为P = S 2 的多晶膜相比,它总是更高。,c和|| c分别是垂直于c轴的方向和平行于c轴的方向。溅射沉积p型(Bi 0.15 Sb 0.85 2 Te 3 和n首次型Bi 2 (Te 0.9 Se 0.1 3 薄膜,电导率各向异性为使用标准四探针法直接测量电流,因为它取决于电流与多晶(纹理)的优先取向之间的夹角φ。 σ(φ)的图显示了预期的行为,可以用σ⊥c和σ || c 贡献的加权混合来描述。因为(σ⊥c || c p <(σ⊥c || c n ,n型膜的各向异性比p型膜强。因此,与p型膜相比,P || c 的角加权贡献导致多晶n型膜的功率因数下降更大。

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