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首页> 外文期刊>Journal of Electronic Materials >The Mechanism of Residual Stress Relief for Various Tin Grain Structures
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The Mechanism of Residual Stress Relief for Various Tin Grain Structures

机译:各种锡晶粒结构的残余应力释放机理

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摘要

A pure tin deposition process was developed with various tin grain structures to study tin whisker formation. Samples were tested for 4000 h to examine whisker formation, grain structures, and intermetallic formation using a focused ion beam (FIB). The lateral side of the FIB-cut cavity displayed tin protrusions after 6 days. These phenomena, along with the growth of tin whiskers and/or hillocks, could illustrate the residual stress relief behavior of various tin grain structures. In full columnar structures, whiskers formed normal to the deposition surface and relieved most of the stress. In contrast, stress relaxation in semicolumnar and random structures is highly likely to occur, and proceeds rapidly in the direction parallel to the deposition surface after only a few days. In comparing mixed grain structures, it is apparent that stress is more likely to be rapidly relieved within structures with fewer grain boundaries.
机译:开发了具有各种锡晶粒结构的纯锡沉积工艺,以研究锡晶须的形成。使用聚焦离子束(FIB)测试样品4000小时,以检查晶须的形成,晶粒结构和金属间化合物的形成。 6天后,FIB切割腔的侧面显示出锡突起。这些现象以及锡晶须和/或小丘的生长,可以说明各种锡晶粒结构的残余应力释放行为。在完整的柱状结构中,晶须垂直于沉积表面形成并缓解了大部分应力。相反,半柱状和随机结构中的应力松弛很可能发生,并且仅在几天后便沿平行于沉积表面的方向快速进行。在比较混合晶粒结构时,很明显,在晶界较少的结构中,应力更容易迅速消除。

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