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首页> 外文期刊>Journal of Electronic Materials >Comparative Study on the Properties of Galvanically Deposited Nano- and Microcrystalline Thin Films of PbSe
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Comparative Study on the Properties of Galvanically Deposited Nano- and Microcrystalline Thin Films of PbSe

机译:电沉积PbSe纳米和微晶薄膜的性能比较研究

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摘要

Thin films of PbSe having both nano- and microstructures have been deposited on transparent conducting oxide (TCO)-coated glass substrates electrochemically, from an aqueous solution of Pb(OAc)2, ethylenediamine tetraacetic acid (EDTA), and SeO2. A Pb strip acted as the sacrificial anode, while the TCO glass was the cathode. No external bias was applied. The formation of PbSe was pH sensitive, and pH ~3 was found to be optimum for film deposition. Films grown at room temperature (25°C) were nanocrystalline (~25 nm), while those deposited at 80°C were microcrystalline (~150 nm). Films were characterized by x-ray diffraction studies, field-emission scanning electron microscope image analysis, infrared spectral analysis, and by both alternating-current (a.c.) and direct-current (d.c.) electrical measurements. A blue-shift was observed for the nanocrystalline films. Film resistivity and junction properties were obtained from electrical measurements.
机译:具有纳米结构和微观结构的PbSe薄膜已经从Pb(OAc) 2 的乙二胺四乙酸(EDTA)水溶液中电化学沉积在透明导电氧化物(TCO)涂层的玻璃基板上。和SeO 2 。铅条充当牺牲阳极,而TCO玻璃充当阴极。没有施加外部偏置。 PbSe的形成对pH敏感,发现pH〜3最适合薄膜沉积。在室温(25°C)下生长的薄膜是纳米晶体(〜25 nm),而在80°C下沉积的薄膜是微晶体(〜150 nm)。通过X射线衍射研究,场发射扫描电子显微镜图像分析,红外光谱分析以及交流电(a.c.)和直流电(d.c.)的电学表征薄膜。对于纳米晶体膜观察到蓝移。膜电阻率和结性质是通过电学测量获得的。

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