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Effect of Al Substitution on the Thermoelectric Properties of the Type VIII Clathrate Ba8Ga16Sn30

机译:Al取代对VIII型笼形Ba 8 Ga 16 Sn 30 的热电性能的影响

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Single-crystal samples of the type VIII clathrate Ba8Ga16−x Al x Sn30 (0 ≤ x ≤ 12) were prepared by the Sn-flux method, and the structural and electrical properties were studied from 300 K to 600 K. The lattice parameter increases linearly as x is increased from 0 to 10.5, which is the solubility limit of Al. For all samples, the electrical conductivity σ decreases monotonically as the temperature is increased. σ(T = 300 K) increases from 1.88 × 104 S/m for x = 0 to 3.03 × 104 S/m for x = 2, and then gradually decreases to 2.4 × 104 S/m with further increase of x to 8. The increase of σ for Al-substituted samples is attributed to enhancement of carrier mobility. The Seebeck coefficients of samples with 0 ≤ x ≤ 8 are negative with large values, and the absolute values increase from 240 μV/K to 320 μV/K as the temperature increases from 300 K to 600 K. At 300 K, the effective mass m*/m 0 is in the range from 0.53 to 0.67, and the samples with x = 6 and x = 8 have a rather low thermal conductivity of 0.72 W/mK and 0.78 W/mK, respectively. ZT reaches 1.2 at 500 K for x = 6.
机译:VIII型笼形Ba 8 Ga 16-x Al x Sn 30 的单晶样品(0≤ x≤12)是通过Sn-flux方法制备的,其结构和电学性质从300 K到600K。随着x从0增加到10.5,这是Al的溶解度极限,晶格参数线性增加。对于所有样品,电导率σ随温度升高而单调降低。 σ(T = 300 K)从x = 0的1.88×10 4 S / m增加到x = 2时的3.03×10 4 S / m然后逐渐随x进一步增加到8,降低到2.4×10 4 S / m。铝取代样品的σ的增加归因于载流子迁移率的提高。 0≤x≤8的样品的塞贝克系数为负值且具有较大的值,并且随着温度从300 K增加到600 K,绝对值从240μV/ K增加到320μV/ K。在300 K时,有效质量m * / m 0 的范围为0.53至0.67,x = 6和x = 8的样品的导热系数分别很低,分别为0.72 W / mK和0.78 W / mK。 。当x = 6时,ZT在500 K时达到1.2。

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