Growth and electrical properties of Pb(Zr,Ti)O_3 thin films by a chemical solution deposition method using zirconyl heptanoate as zirconium source

摘要

Pb(Zr,Ti)O_3 (PZT) thin films were prepared on (111) Pt-coated Si substrates by a chemical solution deposition method using zirconyl heptanoate as zirconium source instead of commonly used zirconium alkoxides. The effects of processing conditions on the microstructure and electrical properties of the PZT thin films were investigated. The texture of the PZT thin films could be changed by selecting different heat-treatment methods. Orientation-dependent electrical properties, including dielectric constant, polarization, and coercive field, were examined. The randomly oriented PZT thin films annealed at 600℃ for 0.5 h showed a well-defined ferroelectric hysteresis loop with a remanent polarization of 18 μC/cm~2 and a coercive field of 74 kV/cm.