Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxy Peter Bach; Christian Ruester; Charles Gould; Charles R. Becker; Georg Schmidt;

摘要

We report the growth of thin films of the half-Heusler alloy NiMnSb by molecular beam epitaxy on InP (001) substrates using an (In,Ga)As buffer. Reflection high-energy electron diffraction and high-resolution X-ray diffraction confirm the high quality growth. Magnetic properties of the samples were investigated using a superconducting quantum interference device.