New structures for carrier-controlled ferromagnetism in quantum wells

M. Bertolini; W. Maslana; H. Boukari; B. Gilles; J. Cibert; D. Ferranc; S. Tatarenko; P. Kossacki; J.A. Gaj

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New structures for carrier-controlled ferromagnetism in quantum wells

机译：量子阱中载流子控制的铁磁性的新结构

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摘要

New structures aiming at controlling ferromagnetic properties of diluted magnetic semiconductors quantum wells (QWs) are presented. The carrier density is monitored by applying voltage in p-i-n diode or adjusting distance between QW and surface.

机译：提出了旨在控制稀磁半导体量子阱（QW）铁磁性的新结构。通过在p-i-n二极管中施加电压或调整QW与表面之间的距离来监控载流子密度。

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来源
《Journal of Crystal Growth》 |2003年第4期|p.342-346|共5页
作者
M. Bertolini; W. Maslana; H. Boukari; B. Gilles; J. Cibert; D. Ferranc; S. Tatarenko; P. Kossacki; J.A. Gaj;
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作者单位

CEA-CNRS-UJF Grenoblegroup Nanophysique et Semieonducteurs, Laboratoire de Spectrometrie Physique, BP 87, 38402 Saint Martin d'Heres, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. molecular beam epitaxy; A3. quantum wells; B2. magnetic materials; B2. semiconducting Ⅱ-Ⅵ materials;

机译：A3。分子束外延A3。量子阱B2。磁性材料B2。半导体Ⅱ-Ⅵ材料;

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1. Magnetic anisotropy and domain structure in carrier-controlled ferromagnetic semiconductors [J] . Dietl T Journal of Physics. Condensed Matter . 2004,第48期

机译：载流子控制的铁磁半导体中的磁各向异性和畴结构
2. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor [J] . H. J. Trodahl, F. Natali, B. J. Ruck, Physical review. B, Condensed Matter And Materals Physics . 2017,第11期

机译：本征铁磁半导体中载流子控制的异常霍尔效应
3. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor [J] . H. J. Trodahl, F. Natali, B. J. Ruck, Physical Review. B, Condensed Matter . 2017,第11a12CD期

机译：内在铁磁半导体中的载体控制的异常霍姆效应
4. New structures for carrier-controlled ferromagnetism in Cd/sub 1-x/Mn/sub x/Te quantum wells [C] . Tatarenko, S., Bertolini, . 2002

机译：Cd / sub 1-x / Mn / sub x / Te量子阱中载流子控制的铁磁性的新结构
5. Injection of spin polarized electrons from iron and cadmium chromium selenide ferromagnetic contacts into gallium arsenide quantum well heterostructures [D] . Mallory, Robert C. 2006

机译：将旋转偏振电子从铁和镉硒化物铁磁性触点注入砷化镓量子阱异质结构中
6. Low voltage control of exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure [O] . V. L. Korenev, I. V. Kalitukha, I. A. Akimov, -1

机译：铁磁-半导体量子阱混合结构中交换耦合的低压控制
7. Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor [O] . H. J. Trodahl, F. Natali, B. J. Ruck, 2017

机译：内在铁磁半导体中的载体控制的异常霍姆效应

New structures for carrier-controlled ferromagnetism in quantum wells

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