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首页> 外文期刊>Journal of Crystal Growth >Growth of Mg-doped GaN micro-crystals using MgCl_2 in direct reaction of Ga and NH_3
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Growth of Mg-doped GaN micro-crystals using MgCl_2 in direct reaction of Ga and NH_3

机译:MgCl_2在Ga和NH_3直接反应中生长Mg掺杂的GaN微晶

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Mg-doped GaN micro-crystals were prepared by using the direct reaction of liquid Ga with NH_3 gas. Magnesium chloride (MgCl_2) was employed as an Mg source in the growth. The growth rate and size of the Mg-doped GaN micro-crystals increased with the amount of MgCl_2. The micro-crystals grew with a hexagonal structure. A broad band emission peak was observed at ~2.7 eV and its intensity increased with Mg concentration in the GaN micro-crystals. It seemed that the increase of the growth rate and the size of the micro-crystals were due to the presence of Mg and Cl species in the growth reaction. Catholuminescence also showed the blue emission at 2.85 eV due to a deep Mg-related complex.
机译:利用液态Ga与NH_3气体的直接反应制备了掺Mg的GaN微晶。氯化镁(MgCl_2)被用作生长中的Mg源。掺Mg的GaN微晶的生长速率和尺寸随MgCl_2的增加而增加。微晶体以六边形结构生长。在〜2.7 eV处观察到一个宽带发射峰,并且其强度随GaN微晶中Mg浓度的增加而增加。生长速度和微晶尺寸的增加似乎是由于在生长反应中存在Mg和Cl物种。由于与镁有关的复合物很深,因此化学发光也显示出2.85 eV处的蓝色发射。

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