首页> 外文期刊>Journal of Crystal Growth >Control of crystal-melt interface shape during horizontal Bridgman growth of InSb crystal using solutal Marangoni convection
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Control of crystal-melt interface shape during horizontal Bridgman growth of InSb crystal using solutal Marangoni convection

机译:溶Marangoni对流控制InSb晶体在布里奇曼水平生长过程中的熔体界面形状

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摘要

In order to control the shape of the crystal-melt (C-M) interface, InSb crystal growth experiments using the horizontal Bridgman method have been carried out to clarify the effects of temperature gradient, cooling rate, and Sb composition of the initial melt. The shape of the C-M interface was almost flat at the initial stage of crystal growth. With progressing growth, the degree of distortion of the C-M interface shape, "concavity", increased and reached a constant value. In the case of a uniform concentration distribution in the melt, the terminal concavity decreased with the decrease of temperature gradient. The terminal concavity decreased with the increase of cooling rate, but it saturated at a high cooling rate. Solutal Marangoni convection was intentionally induced by changing the initial Sb composition. The concavity could be controlled via solutal Marangoni convection without the change of temperature gradient or cooling rate. A flat interface was obtained when the solutal Marangoni convection decelerated the thermal Marangoni convection.
机译:为了控制晶体熔体(C-M)界面的形状,已经进行了使用水平Bridgman方法进行的InSb晶体生长实验,以阐明温度梯度,冷却速率和初始熔体的Sb组成的影响。在晶体生长的初始阶段,C-M界面的形状几乎是平坦的。随着增长的进行,C-M界面形状的变形程度“凹度”增加并达到恒定值。在熔体中浓度分布均匀的情况下,随着温度梯度的降低,末端凹度降低。终端凹度随冷却速率的增加而降低,但在高冷却速率时达到饱和。改变初始Sb的成分有意引起Solutal Marangoni对流。可以通过Marangoni的对流来控制凹度,而不会改变温度梯度或冷却速率。当稀释的马兰戈尼对流使热马兰戈尼对流减速时,获得了平坦的界面。

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