Growth kinetics of diamond film with bias enhanced nucleation and H_2/CH_4/Ar mixture in a hot-filament chemical vapor deposition system

摘要

A study on the effect of growth kinetics and properties of diamond film obtained by addition of argon (～7 vol%) into the methane/hydrogen mixture is carried out using a hot-filament chemical vapor deposition system. A negative bias was used as a nucleation enhancement method in addition to the argon dilution. The scanning electron microscopic images show well faceted crystallites with a predominance of angular shapes, corresponding to <100> and <110> crystalline surfaces. The surface nucleation density and growth rate with argon dilution is found to be two orders of magnitude higher than those without argon dilution. The micro-Raman spectra show a good-quality film whereas X-ray photoelectron spectra show existence of only carbon phase (C_(1s) peak). The effect of argon dilution on the micro structure of the diamond is discussed in the view of reported literature.