Oxygen distribution in silicon melt during a standard Czochralski process studied by sensor measuremetns and comparison to numerical simulation

摘要

The distribution of oxygen in silicon melts kept in a 14" diameter silica crucible of a sandard Czochralski puller was measured using an electrochemicla oxygen-sensor. Three different situations were analyzed; without the presence of a crystal and with 4" diameter crystals being pulled at crucible rotation rates of 2 and 5 rpm. The experimental resuts are discussed within the frame of existing modelling results in he literature and own simultions. It is found that boundary conditions and models which are presently propose din the literature are obviosly no adequate to provide quantitkative correlation with experimental data.