Post-growth, In doping of CdTe single crystals via vapor phase

摘要

We have developed a new, efficient method to dope bulk single crystals of CdTe by In, via, gas phase diffusion, using In_4Te_3 as the source. Doping was carried out on crystals of very high resistively (>5MΩ cm), following annealing in the temperature range of 350-1000 deg C. Resulting crystals showed n-type conductivity with a free carrier concentration in the range of 10~15-10~18 cm~-3 and carrier mobiltiy of 100-750 cm~2/(V s), depending on the annealing temperature and time, and on the cooling conditions. Incorporation of In was found to be a function of annealing time and temperature only. Up to 650 deg C, the In and the free electron concentrations are roughly the same.