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首页> 外文期刊>Journal of Crystal Growth >Laser emission in HgCdTe in the 2-3.5 um range
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Laser emission in HgCdTe in the 2-3.5 um range

机译:HgCdTe中的激光发射范围为2-3.5 um

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摘要

Stimulated emission from HgCdTe separate confinement heterostructure waveguides embedding quantum wells as gain medium is stuided. We explore the effect of composition grading in the barriers as well as that of using strained quantum wells on the temperature evolution of the laser threshold. The main effect of barrier grading is to suppress carrier trapping at low temperarues, leading to an improved excitation transfer from the barriers to the quantim wells, and to an intrinsic exponential dependence of the threshold on the temperature.
机译:研究了嵌入了量子阱的HgCdTe分离限制异质结构波导的激发发射。我们探索了在光栅中成分分级以及使用应变量子阱对激光阈值温度演变的影响。势垒分级的主要作用是抑制低温下的载流子俘获,从而改善了从势垒到量子阱的激发转移,并导致阈值对温度的内在指数依赖性。

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