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首页> 外文期刊>Journal of Crystal Growth >Motion of step pairs during drift-induced step bunching on a Si(001) vicinal face
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Motion of step pairs during drift-induced step bunching on a Si(001) vicinal face

机译:Si(001)邻面上漂移引起的台阶聚束过程中台阶对的运动

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摘要

By Monte Carlo simulation of a lattice model with the periodic boundary condition, we study the motion of step pairs during step bunching on a Si(001) vicinal face heated by direct electric current. When the anisotropy of the surface diffusion is taken into account, step bunching occurs with the drift of adatoms. When the system width along the steps is so large that bunches fluctuate widely, the bunches with step-up drift recombine with neighboring bunches more frequently and grow faster than those with step-down drift. When the system width along the steps is so small that bunches are straight, the recombination is suppressed irrespective of the drift direction. The bunches with step-up drift grow slower than those with step-down drift. With increasing the drift velocity, separation of the step pair from the bunch occurs. The separated step pairs recede with step-down drift and advances with step-up drift.
机译:通过具有周期性边界条件的晶格模型的蒙特卡洛模拟,我们研究了在由直流电加热的Si(001)相邻面上阶梯聚束过程中阶梯对的运动。当考虑到表面扩散的各向异性时,随着原子的漂移而发生台阶聚束。当沿着步长的系统宽度太大以致束起伏很大时,具有升压漂移的束与相邻的束更频繁地重组,并且比具有降落漂移的束更快速地增长。当沿着梯级的系统宽度太小以致束直时,与漂移方向无关地抑制了重组。具有升压漂移的束的增长比具有降压漂移的束的增长慢。随着漂移速度的增加,台阶对从束中分离。分离的台阶对随着下移漂移而后退,而随着上浮漂移而前进。

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