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VLS growth of Si nanocones using Ga and Al catalysts

机译:使用Ga和Al催化剂的VLS生长Si纳米锥

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Vapor-liquid-solid growth of needle-like silicon nanocones via atmospheric pressure chemical vapor deposition from SiCl_4 and using Ga and Al catalysts is reported. Scanning electron microscopy and transmission electron microscopy reveal that the nanocones are composed of an oxide shell with a Si core. Energy dispersive spectroscopy along the length of the nanocones indicates that the catalyst is gradually consumed during the growth process, resulting in the needle-like morphology. Growth of the Si nanocones may occur via H_2 reduction of SiCl_4 at 950 ℃, during which HCl(g) is generated as the reaction by-product. In this growth mechanism, the gradual etching of the Al/Ga catalyst by HCl leads to a gradual decrease of the catalyst volume, and hence the tapered Si nanowire morphology.
机译:据报道,通过从SiCl_4进行大气压化学气相沉积并使用Ga和Al催化剂,针状硅纳米锥的气液固生长。扫描电子显微镜和透射电子显微镜显示,纳米锥由具有Si核的氧化物壳组成。沿纳米锥长度方向的能量色散光谱表明,催化剂在生长过程中逐渐被消耗,形成针状形态。 Si纳米锥的生长可能是通过在950℃下H_2还原SiCl_4而发生的,在此过程中会生成HCl(g)作为反应副产物。在这种生长机制中,用HCl逐渐腐蚀Al / Ga催化剂会导致催化剂体积逐渐减小,从而使Si纳米线形变细。

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