Controlling of preferential growth mode of ZnO thin films grown by atomic layer deposition

摘要

A method of controlling a preferred orientation of ZnO thin films grown by Atomic Layer Deposition (ALD) is discussed. The results for ALD films grown at low temperature with zinc acetate as a zinc precursor are presented. We demonstrate that to control a preferential growth mode one has to correlate growth temperature and separation time (so-called purging time) between pulses of precursors.