机译:生长温度对MOVPE中GaN:Cr结合和结构性能的影响
Institute of Bio- and Nanosystems (IBN-1), Juelich Aachen Research Alliance (JARA), Virtual Institute of Spinelectronics (VISel), Research Center Juelich, 52425 Juelich, Germany;
Institute of Bio- and Nanosystems (IBN-1), Juelich Aachen Research Alliance (JARA), Virtual Institute of Spinelectronics (VISel), Research Center Juelich, 52425 Juelich, Germany;
Institute of Bio- and Nanosystems (IBN-1), Juelich Aachen Research Alliance (JARA), Virtual Institute of Spinelectronics (VISel), Research Center Juelich, 52425 Juelich, Germany;
Institute of Bio- and Nanosystems (IBN-1), Juelich Aachen Research Alliance (JARA), Virtual Institute of Spinelectronics (VISel), Research Center Juelich, 52425 Juelich, Germany;
Central Division of Analytical Chemistry (ZCH), Research Center Juelich, 52425 Juelich, Germany;
Institute of Bio- and Nanosystems (IBN-1), Juelich Aachen Research Alliance (JARA), Virtual Institute of Spinelectronics (VISel), Research Center Juelich, 52425 Juelich, Germany;
CIMAP, UMR 6252 CNRS-ENISCAEN-CEA-UCBN, F-14050 Caen, France;
II. Physikalisches Institut and Virtual Institute of Spinelectronics (VISel), RWTH Aachen, 52056 Aachen, Germany;
II. Physikalisches Institut and Virtual Institute of Spinelectronics (VISel), RWTH Aachen, 52056 Aachen, Germany;
Institute of Bio- and Nanosystems (IBN-1), Juelich Aachen Research Alliance (JARA), Virtual Institute of Spinelectronics (VISel), Research Center Juelich, 52425 Juelich, Germany;
II. Physikalisches Institut and Virtual Institute of Spinelectronics (VISel), RWTH Aachen, 52056 Aachen, Germany;
Institute of Bio- and Nanosystems (IBN-1), Juelich Aachen Research Alliance (JARA), Virtual Institute of Spinelectronics (VISel), Research Center Juelich, 52425 Juelich, Germany;
Institute of Bio- and Nanosystems (IBN-1), Juelich Aachen Research Alliance (JARA), Virtual Institute of Spinelectronics (VISel), Research Center Juelich, 52425 Juelich, Germany;
A1. Crystallites; A3. Metatorganic vapor phase epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting materials;
机译:使用化学剥离和室温直接晶片键合以及GaN晶片规模在ZnO缓冲蓝宝石上进行GaN晶片规模的MOVPE生长,从蓝宝石转移到玻璃基板的MOVPE GaN薄膜的结构和成分表征
机译:LT-GaN成核层对MOVPE生长的a面GaN的结构和光学性质的影响
机译:MOVPE生长温度对InGaN MQW激光二极管的结构和光学性能的影响
机译:低温GaN层对高温GaN层对GaAs(001)基板的立方GaN癫痫结构结构和光学性质的影响
机译:在中等温度下辐照的钒基合金的显微组织变化及其对力学性能的影响。
机译:MOVPE紧密耦合喷头反应器中的喷头-样品距离(GAP)对GaN生长的影响
机译:生长温度对飞机蓝宝石激光MBE种植外延薄GaN薄膜结构和光学性质的影响