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Study of Te inclusions in CdMnTe crystals for nuclear detector applications

机译:用于核探测器的Cd ManTe晶体中夹杂物的研究

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摘要

The concentration, size and spatial distribution of Te inclusions in the bulk of CdMnTe crystals mined from two batches of ingots were studied. An isolated planar layer decorated with Te inclusions was identified in CdMnTe crystals from the second ingot. The internal electric field of a CMT crystal was probed by infrared (IR) imaging employing Pockels electro-optic effect. The effect of an isolated plane of Te inclusions on the internal electric-field distribution within the CdMnTe crystal was studied. Space charge accumulation around the plane of Te inclusions was observed, which was found to be higher when the detector was reverse-biased. The effects of the plane of Te inclusions on the electric-field distribution within the CdMnTe crystal, and the quality of CdMnTe crystals for nuclear detector applications are discussed.
机译:研究了从两批铸锭中提取的大部分CdMnTe晶体中Te夹杂物的浓度,大小和空间分布。在第二块晶锭的CdMnTe晶体中发现了一个装饰有Te夹杂物的孤立平面层。通过采用普克尔斯电光效应的红外(IR)成像探测CMT晶体的内部电场。研究了Te夹杂物的分离平面对CdMnTe晶体内部电场分布的影响。观察到Te夹杂物平面周围的空间电荷积累,当检测器反向偏置时,发现电荷积累更高。讨论了Te夹杂物平面对CdMnTe晶体内电场分布的影响以及用于核探测器应用的CdMnTe晶体的质量。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第14期|3702-3707|共6页
  • 作者单位

    Physics Department (Dubois, room 305), Fisk University, 1000 17th Avenue North Nashville, TN 37208-3051, USA Brookhaven National Laboratory, Upton, NY, USA Vanderbilt University, Nashville, TN, USA;

    Brookhaven National Laboratory, Upton, NY, USA;

    Physics Department (Dubois, room 305), Fisk University, 1000 17th Avenue North Nashville, TN 37208-3051, USA;

    Brookhaven National Laboratory, Upton, NY, USA;

    Brookhaven National Laboratory, Upton, NY, USA;

    Brookhaven National Laboratory, Upton, NY, USA;

    Physics Department (Dubois, room 305), Fisk University, 1000 17th Avenue North Nashville, TN 37208-3051, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Defects; A1. Doping; A1. Stresses; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting Ⅱ-Ⅵ materials;

    机译:A1。缺陷;A1。掺杂A1。压力;A2。布里奇曼技术;B1。镉化合物;B2。半导体Ⅱ-Ⅵ材料;

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