机译:氮等离子体下蓝宝石衬底上GaN的溶液生长
Department of Electrical, Electronic and Information Engineering, Shizuoka Institute of Science and Technology, Fukuroi 2200-2, Shizuoka 437-8555, Japan;
Department of Electrical, Electronic and Information Engineering, Shizuoka Institute of Science and Technology, Fukuroi 2200-2, Shizuoka 437-8555, Japan;
Department of Electrical, Electronic and Information Engineering, Shizuoka Institute of Science and Technology, Fukuroi 2200-2, Shizuoka 437-8555, Japan;
Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432-8011, Japan;
A2. Growth from solution; A3. Liquid phase epitaxy; B1. Nitride; B2. Semiconducting gallium compounds;
机译:使用岛状GaN缓冲剂在蓝宝石衬底上生长GaN晶体,该GaN缓冲剂是通过重复进行薄层低温沉积和射频等离子体分子束外延退火而形成的
机译:高压溶液法在GaN /蓝宝石衬底上生长GaN
机译:使用化学剥离和室温直接晶片键合以及GaN晶片规模在ZnO缓冲蓝宝石上进行GaN晶片规模的MOVPE生长,从蓝宝石转移到玻璃基板的MOVPE GaN薄膜的结构和成分表征
机译:高压溶液法在带有各种金属掩模的GaN /蓝宝石衬底上生长GaN
机译:纳米点装饰蓝宝石衬底的制造,用于氮化镓的简单生长模式沉积。
机译:蓝宝石衬底上具有反应性等离子体沉积AlN成核层的GaN基紫外发光二极管的效率提高
机译:在轴上蓝宝石衬底上的N极性GaN的mOCVD生长:alN的影响 GaN表面小丘密度上的成核层