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Effect of Mn concentration and growth temperature on nanostructures and magnetic properties of Ge_(1-x)Mn_x grown on Si

机译:Mn浓度和生长温度对Si上生长的Ge_(1-x)Mn_x纳米结构和磁性的影响

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摘要

The nanostructures and magnetic properties of Ce_(1-x)Mn_x thin films grown on Si substrates by molecular beam epitaxy, with different nominal Mn concentrations (1-4%) and different growth temperatures, have been systematically investigated by transmission electron microscopy and superconducting quantum interference device. It was discovered that when Ge_(1-x)Mn_x thin films were grown at 70 ℃, with increase in Mn concentration, Mn-rich tadpole shaped clusters started to nucleate at 1% Mn and become dominate in the entire film at 4% Mn. While for the thin films grown at 150 ℃, tadpoles was firstly seen in the film with 1% Mn and subsequently Mn-rich secondary precipitates became dominant. The magnetic properties show specific features, which are mainly related to the nature and amount of Mn-rich clusters/precipitates within these thin films.
机译:通过透射电子显微镜和超导系统研究了不同标称Mn浓度(1-4%)和不同生长温度的分子束外延在Si衬底上生长的Ce_(1-x)Mn_x薄膜的纳米结构和磁性。量子干涉仪。发现当Ge_(1-x)Mn_x薄膜在70℃下生长时,随着Mn浓度的增加,富Mn的t形簇开始以1%Mn成核,并在整个膜中以4%Mn占主导地位。 。在150℃下生长的薄膜中,首先在含1%Mn的薄膜中看到t,然后富含Mn的次生沉淀物占主导地位。磁性质显示出特定的特征,这些特征主要与这些薄膜中富锰的团簇/沉淀的性质和数量有关。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第20期|p.3034-3039|共6页
  • 作者单位

    Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia;

    rnDevice Research Laboratory, Electrical Engineering, University of California at Los Angeles, CA 90095, USA;

    rnMaterials Engineering, The University of Queensland, Brisbane QLD 4072, Australia;

    rnMaterials Engineering, The University of Queensland, Brisbane QLD 4072, Australia;

    rnMaterials Engineering, The University of Queensland, Brisbane QLD 4072, Australia;

    rnDevice Research Laboratory, Electrical Engineering, University of California at Los Angeles, CA 90095, USA;

    rnDevice Research Laboratory, Electrical Engineering, University of California at Los Angeles, CA 90095, USA;

    rnIntel assignee to Western Institute of Nanoelectronics (WIN) Intel Corporation, 2200 Mission College Blvd. Santa Clara, CA 95052, USA;

    rnMaterials Engineering, The University of Queensland, Brisbane QLD 4072, Australia Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072, Australia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting germanium;

    机译:A3。分子束外延;B2。磁性材料;B2。半导体锗;

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