Solution growth of crystalline silicon on glass in the In-Si-Mo system

摘要

Progress in low-temperature growth of crystalline silicon from a metallic solution is presented. Growth has been performed on glass that is coated with an electrically conductive layer. Thermodynamic stability of this interlayer in contact with the saturated growth solution is an essential precondition for subsequent process steps. Therefore, materials involved in the process must be properly chosen. Molybdenum disilicide thin films are shown to withstand the solution contact. In this way, further processing, that includes the formation of seed crystals by use of the vapor-liquid-solid mechanism and subsequent outgrowth from a low-temperature metallic solution, is successful. Growth of {111} faceted silicon crystallites on glass with a size of up to 200 urn in diameter has been shown.