...
机译:在图案化硅衬底上生长的(1 1 0 1)半极性InGaN / GaN多量子阱的光学性质
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Institute of Photonic System, College of Photonics, National Chiao-Tung University, No.301, Caofa 3rd. Road, Cuiren Township, Tainan County 71150, Taiwan;
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan Department of Opto-Electronks Epitaxy and Devices, Industrial Technology Research Institute, Rm. 206, Bldg 78, 195, Section 4, Chung Hsing Rd., Chuttmg, Hsinchu 31040, Taiwan;
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Opto-Electronks Epitaxy and Devices, Industrial Technology Research Institute, Rm. 206, Bldg 78, 195, Section 4, Chung Hsing Rd., Chuttmg, Hsinchu 31040, Taiwan;
Department of Electronics, Nagoya University, 3C-1, Furo-cho, Chikusa, Nagoya, Akhi, 464-8603, Japan;
Department of Electronics, Nagoya University, 3C-1, Furo-cho, Chikusa, Nagoya, Akhi, 464-8603, Japan;
Department of Electronics, Nagoya University, 3C-1, Furo-cho, Chikusa, Nagoya, Akhi, 464-8603, Japan;
Department of Electrical & Electronic Engineering, Akhi Institute of Technology, 1247 Yachigusa, Yakusa, Toyota 470-0392, Japan;
A3. Metalorganic chemical vapor deposition; A3; Quantum wells; B1. Nitride; B2. Semiconductor Ⅲ-Ⅴ materials; B3. Light emitting diode;
机译:半极(20-21)IngaN / GaN多量子孔在图案化的蓝宝石衬底上生长,内部量子效率高达52%
机译:在图案化蓝宝石衬底上生长的InGaN / GaN多量子阱LED的V缺陷形成和光学特性
机译:在独立GaN(0001)衬底上生长的InGaN / GaN多量子阱的表面形态和光学性质
机译:图案化Si基板上的半极(1-101)和(11-22)ingaN / GaN发光二极管的制造和性质
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
机译:生长在a面和m面GaN衬底上的InGaN / GaN多量子阱的光学和偏振特性的研究