Growth of homogeneous semiconductor mixed crystals by the traveling liquidus-zone method

摘要

Compositionally uniform mixed crystals of In_xGa_(1-x)As (0.07 < x < 0.35) and Si_(0.5)Ge_(0.5) were grown by the traveling liquidus-zone (TLZ) method. The TLZ method is a kind of zone-melting method but is different from a conventional method in forming a liquidus-zone at a relatively low temperature gradient of about 10℃/cm. In the paper, the principle of the TLZ method, examples of TLZ-grown crystals and merits and demerits of the TLZ method are described. Finally, application of the TLZ-grown In_(0.13)Ga_(0.87)As crystals to substrates and successful fabrication of high performance laser diodes are introduced.