首页> 外文期刊>Journal of Crystal Growth >SWNT growth on Al_2O_x/Co/Al_2O_x multilayer catalyst using alcohol gas source method in high vacuum
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SWNT growth on Al_2O_x/Co/Al_2O_x multilayer catalyst using alcohol gas source method in high vacuum

机译:酒精气源法在高真空下SW_2在Al_2O_x / Co / Al_2O_x多层催化剂上的生长

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摘要

Al_2O_x/Co/Al_2O_x multilayer catalysts were employed to grow single-walled carbon nanotubes (SWNTs) by an alcohol gas source method in a high vacuum. Compared to a Co/Al_2O_x bilayer catalyst, the SWNT yield was drastically enhanced for growth at 700℃ by optimizing the thickness of the A1_2O_x top layer, and vertically aligned SWNTs could be grown even at a low ethanol pressure of 1.0×10~(-1) Pa. At a growth temperature of 400 °C, the yield enhancement effect decreased and was observed only for a 0.2 nm Al thickness of the A1_2O_x top layer. The distribution of SWNT diameters at 400℃ estimated from the Raman spectra showed that there is little difference between the Co/Al_2O_x bilayer and the Al_2O_x/Co/Al_2O_x multilayer catalysts, in marked contrast to the distribution at 700℃. These results suggest that surface migration of Co atoms is suppressed at 400℃ and the size of the Co catalyst particles is kept small even at the growth temperature, which leads to small enhancement effect of the A1_2O_x top layers.
机译:采用Al_2O_x / Co / Al_2O_x多层催化剂通过醇气源法在高真空下生长单壁碳纳米管(SWNT)。与Co / Al_2O_x双层催化剂相比,通过优化A1_2O_x顶层的厚度,可显着提高SWNT产量,以便在700℃下生长,即使在低乙醇压力1.0×10〜(- 1)Pa。在生长温度为400°C时,产率增强效果下降,并且仅在Al厚度为0.2 nm的Al_2O_x顶层观察到。从拉曼光谱估计的400℃下SWNT直径分布表明,Co / Al_2O_x双层膜与Al_2O_x / Co / Al_2O_x多层催化剂之间的差异很小,与700℃下的分布明显不同。这些结果表明,在400℃下,Co原子的表面迁移受到抑制,并且即使在生长温度下,Co催化剂颗粒的尺寸也保持较小,这导致Al_2O_x顶层的增强效果较小。

著录项

  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.1101-1104|共4页
  • 作者单位

    Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502, Japan;

    Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502, Japan;

    Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502, Japan;

    Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku, Nagoya 468-8502, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Chemical vapor deposition processes; B1. Nanomaterials;

    机译:A3。化学气相沉积工艺;B1。纳米材料;

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