机译:热激发电流光谱法在半绝缘Cd_(0.9)Zn_(0.1)Te中的缺陷表征中的应用
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China;
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China;
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China;
Science Institute, Air Force Engineering University, Xi'an 710051, China;
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China;
A1. Characterization; A1. Defects; A2. Bridgman technique; B1. Cadmium compounds; B2. Semiconducting cadmium compounds; B2. Semiconducting II-VI materials;
机译:半绝缘铟掺杂Cd_(0.9)Zn_(0.1)Te晶体中的自补偿极限电导率
机译:深度缺陷对CD_(0.9)Zn_(0.1)Te晶体电性能的影响
机译:Cd_(0.9)Zn_(0.1)Te:Al中的辐照诱导缺陷
机译:用于伽马射线探测器的CD_(0.9)Zn_(0.1)Te的CD_(0.9)Zn_(0.1)Te的晶体生长:热刺激电流(TSC),电子束感应电流(EBIC)和脉冲高度光谱(PHS)
机译:通过红外透射显微镜对Cd0.9Zn 0.1Te检测器级半导体中的第二相进行表征,并在改进的垂直Bridgman生长中实施安瓿旋转技术以最小化第二相。
机译:40wt%Ce0.9pr0.1O2-δ-60wt%ndxsr1-xfe0.9cu0.1o3-δ双相膜的合成与表征有效氧气分离
机译:Cd_(0.8)Zn_(0.2)Te缺陷的阴极发光和光诱导电流谱研究