Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition

摘要

We report formation and optical properties of site-controlled, multi-stack InGaAs/GaAs quantum dots (QPs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InGaAs/GaAs QPs are realized in GaAs NWs grown on patterned GaAs(111)B substrates in the form of InGaAs/GaAs heterostructures and identified by structural analyses and photoluminescence characterization. Optical characterization at 10 K corroborates formation of high-quality, multi-stack InGaAs/ GaAs QP-in-NWs up to 50-stack without degradation of PL intensities. In addition, light emission at room temperature from multi-stack InGaAs/GaAs QPs embedded in GaAs NWs is realized. These results would enable the realization of high-performance IBSCs based on site-controlled QP-in-NWs utilizing existing, well-established NW growth technologies on a GaAs platform.