Growth of CdTe_xSe_(1-x) from a Te-rich solution for applications in radiation detection

摘要

We grew CdTe_xSe_(1-x) (CTS) crystals from a Te-rich solution by using the traveling heater method (THM). The average size distribution and concentration of Te inclusions/precipitates in these as-grown samples were measured to be ～7 × 104 cm~(-3), which is much lower than values typical for the present state-of-the-art commercial CdZnTe (CZT) material. Their low-temperature photoluminescence measurement indicates high quality of the material; however the resistivity obtained via /-V curve measurements was ～5 × 10~8 Ω-cm, which is low in comparison to that required for gamma detectors. A well-resolved alpha response peak can be detected for both planar- and hemispherical detector geometry. The (μτ)_e value for our as-grown sample at room temperature was found to be ～4 × 10~(-3) cm~2/V.