Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells

摘要

In this paper we have studied the effect of MOVPE growth conditions on the arsenic incorporation in strained InAsP quantum wells (QWs) grown on InP substrates. Lower growth temperatures result in an enhanced arsenic incorporation, as well as an improvement in the quality of the heterostructure. It is seen that an increase in the arsine flux does not readily increase the arsenic composition I the film which is dependent on temperature, strain and growth condi- tions.