Investigation of the growth mechanism of an InSe epitaxial layer on a MoS_2 substrate

摘要

Sub-monolayer films of layered semiconductor InSe were grown on MoS_2 substrates by molecular beam epitaxy, and the change in their growth features with Se/In flux ratio was investigated using scanning tunneling microscope in vacuum. It was found that InSe domains grown at 340 deg C have a hexagonal shape when the Se/In ratio is about 17. Detailed images of the hexagonal InSE domains have revealed that adjacent sides of the hexagon have different structures; one is a straight edge and the other is a disordered edge.