Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In_(0.2)Ga_(0.8)As/GaAs high electron mobility transistor structures

摘要

InGaP/GaAs layers were grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell. The photoluminescence (PL) peak energy of the InGaP epilayers increased with the increase of the Ⅴ/Ⅲ flux ratio and decrease of the substrate temperature. High-quality InGaP epilayers with a PL FWHM of 6.5 meV were obtained by using the optimized growth conditions. The InGaP layers were incorporated in the InGaP/In_(0.20)Ga_(0.80)As/GaAs pseudomorphic high electron mobility transistor structures. This structure showed low two-dimensional electron gas mobility, which was found to be attributed to the InGaP/InGaAs interface. Despite the low mobility for the In-GaP/In_(0.20)Ga_(0.80)As/GaAs HEMT structures, very promising device results have been achieved..