Directional solidification of In_xGa_(1-x)As

摘要

We have investigated a constitutional supercooling and segregation phenomena in In_xGa_(1-x)As crystals unidirection- ally solidified in a vertical system. The constitutional supercooling generates characteristic fluctuations of composition along the growth direction and this can be explained by a free nucleation ahead from the growth interface. The macroscopic compositional profiles of the grown crystals suggest that a transport of solute is mainly dominated by the diffusion. Such a growth mode is partly attributed to the difference in density between InAs and GaAs.