Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas

摘要

Silicon carbide growth by sublimation sandwich method in the atmosphere of an inert gas is studied both experimentally and theoretically. An analytical description of diffusion transport of gaseous reactive species, coupled with quasi-equilibrium heterogeneous reactions at the source-wafer and substrate surfaces is derived. The species transport inside the sandwich cell is shown to be essentially determined by conditions in the ambience. The growth rate is studied as a function of process parameters (substrate temperature, temperature difference between the source-wafer and the substrate, and others). The developed approach is extended to the transient from the diffusion to the collisionless regime of the species transport. The theoretical results are in good agreement with the experimental data obtained.