Impurity effect on <111> and <110> directions of growing SnO_2 single crystals in SnO_2-Cu_2O flux system

摘要

Impurity effects of tri-valent cations on the growth of (111) and (110) faces of SnO_2 in th SnO_2-Cu_2O flux system were investigated using an improved dipping method by which supersaturation can be maintained costant, using Cr~3+ as a representative cation. It was confirmed that the presence of Cr~3+ accelerates the growth rate in the <111> direction and suppresses that in the <110> direction.