Chemical solution deposition derived buffer layers for MOCAD-grown GaN films

摘要

A polymeric Ga-containing liquid precursor was used for the first time to prepare a buffer layer for the growth of GaN by metalorganic chemical vapor deposition. The buffer layer was prepared by chemical solution deposition (CSD), i.e. spincoating the precursor on a sapphire substrate followed by pyrolysis in ammonia. The GaN films were characterized by optical and electron microscopy, XRD rocking curves, photoluminescence and Hall measurements. The CSD-buffered GaN films showed a significantly better crystal quality than unbuffered films and came close to the Quality of conventionally buffered ones.