Re-entrance phase formation of CeSb thin films

摘要

We report the epitaxial growth fo (100)- and (111)-oriented CeSb thin films on al_2O_3(1120) and (0001) substrates by means of molecular beam epitaxy. Depending on the overall Sb-to-Ce flux ratio and the molecular state of Sb_x, we observe a re-entrance behavior in the phase formation and orientation of CeSb on Al_2O_3 (1120).