Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

摘要

Monocrystalline GaN and Al_xGa_1-xN films have been grown via the pendeo-epitaxy (PE)~1 technique with and without Si_3N_4 masks on GaN/AIN/6H-SiC (0001) and GaN(0001)/AIN(0001)/3C-SiC(111)/Si(111) substrates using organometallic vapor phase deposition.