Shaped crystal growth of 50 cm diameter silicon thin-walled cylinders by edge-defined film-fed growth (EFG)

摘要

A system for growth of 50 cm diameter hollow cylindrical silicon crystals by the edge-defined film-fed growth (EFG) technique has been designed and constructed. Cylinders were grown with lengths up to 1.2 m and wall thicknesses ranging from 75 to 300 μm. Growth speed limits, effects of stress and material characteristics of the cylinders were investigated to evaluate the potential of large diameter EFG systems to provide increased productivity for silicon wafer manufacture.