Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP

摘要

Liquid-phase epitaxial growth of InP was performed at constant growth temperature by the temperature difference method under controlled vapor pressure on InP substrates. Growth temperature was tept constant from 550 deg.C to 280 deg.C. The as-grown surface morphology was investigated by Nomarski interference optical microscope and electron microscope. The anisotropic initial growth nuclei are investigated on {001}, {111}}A,B and {110} oriented InP substrates. This anisotropic behavior is discussed in view of the anisotropy of lateral growth rate due to the preferential surface migration and sticking at specific kinks and steps on the surface.